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September 1996
BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance. This product is particularly suited to low voltage, low current applications, such as small servo motor controls, power MOSFET gate drivers, and other switching applications.
Features
BSS100: 0.22A, 100V. RDS(ON) = 6 @ VGS = 10V. BSS123: 0.17A, 100V. RDS(ON) = 6 @ VGS = 10V High density cell design for extremely low RDS(ON). Voltage controlled small signal switch. Rugged and reliable.
_______________________________________________________________________________
D
G
BSS100
BSS123
S
Absolute Maximum Ratings
Symbol Parameter
TA = 25C unless otherwise noted
BSS100
BSS123
Units
VDSS VDGR VGSS
Drain-Source Voltage Drain-Gate Voltage (RGS < 20K) Gate-Source Voltage - Continuous - Non Repetitive (TP < 50 S)
100 100 14 20 0.22 0.9 0.63 -55 to 150 300 0.17 0.68 0.36
V V V
ID PD TJ,TSTG TL
Drain Current - Continuous - Pulsed Total Power Dissipation @ TA = 25C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes, 1/16" from Case for 10 Seconds Thermal Resistacne, Junction-to-Ambient
A
W C C
THERMAL CHARACTERISTICS
RJA
200
350
C/W
(c) 1997 Fairchild Semiconductor Corporation
BSS100 Rev. F1 / BSS123 Rev. F1
Electrical Characteristics (T
Symbol Parameter OFF CHARACTERISTICS
A
= 25C unless otherwise noted)
Conditions
Type
Min
Typ
Max
Units
BVDSS IDSS
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current
VGS = 0 V, ID = 250 A VDS = 100 V, VGS = 0 V VDS = 100 V, VGS = 0 V VDS = 100 V, VGS = 0 V VDS = 60 V, VGS = 0 V VDS = 20 V, VGS = 0 V TJ=125 C
o
All
BSS100 BSS123
100 15 1 60 10 10 10 50
V A A A nA nA nA nA
All
BSS100 BSS123 BSS100 BSS123
IGSSF
Gate - Body Leakage, Forward
VGS = 20 V, VDS = 0 V VGS = 20 V, VDS = 0 V
ON CHARACTERISTICS (Note 1)
VGS(th) RDS(ON)
Gate Threshold Voltage Static Drain-Source On-Resistance
VDS = VGS, ID = 1 mA VGS = 10 V, ID = 0.22 A VGS = 10 V, ID = 0.17 A VGS = 4.5 V, ID = 0.22 A VGS = 4.5 V, ID = 0.17 A
All
BSS100 BSS123 BSS100 BSS123 BSS100 BSS123
0.8
1.4 2.8 2.8 3.2 3.2
2 6 6 10 10
V
gFS
Forward Transconductance
VDS = 10 V, ID = 0.22 A VDS = 10 V, ID = 0.17 A
0.08 0.08
0.4 0.4 29 10 2 60 15 6 8 8 13 16 1.4 0.15 0.2 2 0.25 0.4 0.22 0.17 0.9 0.68 0.9 0.9 1.3 1.3
S
DYNAMIC CHARACTERISTICS
Ciss Coss Crss tD(on) tr tD(off) tf Qg Qgs Qgd IS ISM VSD
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Totall Gate Charge Gate-Source Charge Gate-Drain Charge Maximum Continuous Source Current Maximum Pulse Source Current (Note 1) Drain-Source Diode Forward Voltage
VDS = 25 V, VGS = 0 V, f = 1.0 MHz
All All All
pF pF pF ns ns ns ns nC nC nC A A V
SWITCHING CHARACTERISTICS (Note 1)
VDD = 30 V, ID = 0.28 A, VGS = 10 V, RGEN = 50
All All All All
VDS = 10 V, ID = 0.22 A, VGS = 10 V,
All All All
BSS100 BSS123 BSS100 BSS123
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VGS = 0 V, IS = 0.44 A VGS = 0 V, IS = 0.34 A
BSS100 BSS123
Note: 1. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%.
BSS100 Rev. F1 / BSS123 Rev. F1
Typical Electrical Characteristics
0 .6
2 .4
V GS = 1 0 V
I D , DRAIN-SOURCE CURRENT (A) DRAIN-SOURCE ON-RESISTANCE
0 .5
0 .4
R DS(on) , NORMALIZED
5 .0 4 .0 3 .5
3 .0
2
V GS = 2 .5 V
0 .3
2 .5
1 .6
3 .0 3 .5 4 .0 5 .0
0 .2
1 .2
0 .1
10
2 .0
0 0 1 V
DS
2 3 , DRAIN-SOURCE VOLTAGE (V)
4
5
0 .8 0 0 .1 0 .2 0 .3 0 .4 I , DRA IN CURRENT (A)
D
0 .5
0 .6
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Gate Voltage and Drain Current.
2 .2 2
3
DRAIN-SOURCE ON-RESISTANCE
1 .8 1 .6 1 .4 1 .2 1 0 .8 0 .6 0 .4 -50
DRAIN-SOURCE ON-RESISTANCE
I D = 220m A VGS =10V
R DS(on) , NORMALIZED
V GS = 10V
2 .5
TJ = 1 2 5 C
2
R DS(ON), NORMALIZED
1 .5
25C
1
-55C
0 .5
-25
0 25 50 75 100 TJ , JUNCTION TEM PERA T U RE (C)
125
150
0 0 0 .2 0 .4 0 .6 ID , DRAIN CURRENT (A) 0 .8 1
Figure 3. On-Resistance Variation with Temperature.
Figure 4. On-Resistance Variation with Drain Current and Temperature.
1.2
1 .15 DRAIN-SOURCE BREAKDOWN VOLTAGE
Vth , NORMALIZED GATE-SOURCE THRESHOLD VOLTAGE
1.1
VDS = V GS I D = 250A
BV DSS , NORMALIZED
I D = 250A
1 .1
1
1 .05
0.9
1
0.8
0 .95
0.7 -50
-25
0
25 50 75 100 125 T J, JU N CTION TEMPERATURE (C)
150
175
0 .9 -50
-25
0
25 50 75 100 125 T J , JUNCTION TEMPERATURE (C)
150
175
Figure 5. Gate Threshold Variation with Temperature.
Figure 6. Breakdown Voltage Variation with Temperature.
BSS100 Rev. F1 / BSS123 Rev. F1
Typical Electrical Characteristics (continued)
80 50
10
I D =220m A
C iss
CAPACITANCE (pF)
20
VGS , GATE-SOURCE VOLTAGE (V)
VDS = 5V
8
20
6
C oss
10
5
4
f = 1 MHz V GS = 0V
1 0 .1 0 .2 0 .5 1 2 5 10 V DS , DRAIN TO SOURCE VOLTAGE (V)
C rss
2
0 50 0 0 .2 0 .4 0 .6 0 .8 1 Q g , GATE CHARGE (nC) 1 .2 1 .4
Figure 7. Capacitance Characteristics.
Figure 8. Gate Charge Characteristics.
0 .8
, TRANSCONDUCTANCE (SIEMENS)
VDS = 5V
0 .6
T = -55C J 25C
0 .4
125C
0 .2
g
0 0 0 .1 0 .2 0 .3 0 .4 I D , DRAIN CURRENT (A) 0 .5 0 .6
FS
Figure 9. Transconductance Variation with Drain Current and Temperature.
VDD t d(on) V IN
D
t on tr
90%
t off t d(off)
90%
tf
RL V OUT
DUT
VGS
VOUT
R GEN
10%
10%
INVERTED
G
90%
S
V IN
10%
50%
50%
PULSE W IDTH
Figure 10. Switching Test Circuit.
Figure 11. Switching Waveforms.
BSS100 Rev. F1 / BSS123 Rev. F1
2 1 0.5
RD S(O Li N) t mi
2
10 1m 10 10 1s 10 s DC 0m ms s
0u
s
I D , DRAIN CURRENT (A)
1 0.5
RD S( ) ON Lim it
10 1m 10 10
VGS = 20V SINGLE PULSE TA = 25C
0u
s
s
I D , DRAIN CURRENT (A)
0.2 0.1 0.05
0.2 0.1 0.05
ms
s
0m
s
VGS = 20V SINGLE PULSE
0.01 0.005 1
1s 10 s DC
TA = 25C
0.01 0.005
5 10 20 50 VDS , DRAIN-SOURCE VOLTAGE (V)
100 150
1
5 10 20 50 VDS , DRAIN-SOURCE VOLTAGE (V)
100 150
Figure 12. BSS100 Maximum Safe Operating Area.
Figure 13. BSS123 Maximum Safe Operating Area.
1 TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE
0.5
D = 0.5
0.2 0.1 0.05
0 .2 0.1 P(pk) 0.05
R JA (t) = r(t) * R JA o R JA = 200 C/ W
t1
0 .0 2 0.01
t2
0.02 0.01 0.0001
Single Pulse
TJ - T A = P * RJA (t) Duty Cycle, D = t1 /t2
0.001
0.01
0.1 t 1, TIME (sec)
1
10
100
300
Figure 14. BSS100 Transient Thermal Response Curve.
1 TRANSIENT THERMAL RESISTANCE 0.5 0.2 0.1 0.05
D = 0.5 0 .2 0.1 0 .05 0 .02 0 .01 P(pk)
r(t), NORMALIZED EFFECTIVE
R JA (t) = r(t) * R JA o R = 347 C/ W JA
0.01
Single Pulse
t1
t2
0.002 0.001 0.0001 0.001 0.01 0.1 t1 , TIME (sec) 1 10
TJ - T A = P * RJA (t) Duty Cycle, D = t1 /t2
100
300
Figure 15. BSS123 Transient Thermal Response Curve.
BSS100 Rev. F1 / BSS123 Rev. F1
TO-92 Package Dimensions
TO-92; TO-18 Reverse Lead Form (J35Z Option) (FS PKG Code 92, 94, 96)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in: inches [millimeters]
Part Weight per unit (gram): 0.22
* *;
Note: All package 97 or 98 transistors are leadformed to this configuration prior to bulk shipment. Order L34Z option if in-line leads are preferred on package 97 or 98. * Standard Option on 97 & 98 package code
January 2000, Rev. B
SOT-23 Tape and Reel Data and Package Dimensions
SOT-23 Packaging Configuration: Figure 1. 0
Customized La bel
Packaging Description:
SOT-23 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a m ultilayer film (Heat Activated Adhesive in na ture) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled pa in standard option are shipped with rts 3,000 units per 7" or 177cm diameter reel. The reels are dark blue in color an is made of polystyrene plastic (antid static coated). Other option comes in 10,000 units per 13" or 330cm diameter reel. This and s ome other options are described in the P ackaging Information table. These full reels are individually labeled and placed inside as tanda intermediate made of recyclable corrugated rd brown pap with a Fairchil d logo printing. One pizza box er contains eight reels maximum. And thes intermediate e boxes are placed inside a labeled shipping box which comes in different sizes depending on t e nu h mber of parts shippe d.
Antistatic Cover Tape
Human Readable Label
Embossed Carrier Tape
3P
SOT-23 Packaging Information Packaging Option Packaging type Qty per Reel/Tube/Bag Reel Size Box Dimension (mm) Max qty per Box Weight per unit (gm) Weight per Reel (kg) Note/Comments Standard (no flow code ) TNR 3,000 7" Dia 187x107x183 24,000 0.0082 0.1175 D87Z TNR 10,000 13" 343x343x64 30,000 0.0082 0.4006
3P
3P
3P
SOT-23 Unit Orientation
343mm x 342mm x 64mm Intermediate box for L87Z Option Human Readable Label
Human Readable Label sample
H uman readable Label
SOT-23 Tape Leader and Trailer Configuration: Figure 2. 0
187mm x 107mm x 183mm Intermediate Box for Stand Option ard
Carrier Tape Cover Tape
Components Trailer Tape 300mm minimum or 75 empty poc kets Leader Tape 500mm minimum or 125 empty pockets
September 1999, Rev. C
SOT-23 Tape and Reel Data and Package Dimensions, continued
SOT-23 Embossed Carrier Tape Configuration: Figure 3.0
P0 T E1 P2 D0 D1
F E2 B0 Wc
W
Tc K0
P1
A0
User Direction of Feed
Dimensions are in millimeter Pkg type SOT-23 (8mm)
A0
3.15 +/-0.10
B0
2.77 +/-0.10
W
8.0 +/-0.3
D0
1.55 +/-0.05
D1
1.125 +/-0.125
E1
1.75 +/-0.10
E2
6.25 min
F
3.50 +/-0.05
P1
4.0 +/-0.1
P0
4.0 +/-0.1
K0
1.30 +/-0.10
T
0.228 +/-0.013
Wc
5.2 +/-0.3
Tc
0.06 +/-0.02
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481 rotational and lateral movement requirements (see sketches A, B, and C).
20 deg maximum Typical component cavity center line
0.5mm maximum
B0 20 deg maximum component rotation
0.5mm maximum
Sketch A (Side or Front Sectional View)
Component Rotation
A0 Sketch B (Top View)
Typical component center line
Sketch C (Top View)
Component lateral movement
SOT-23 Reel Configuration: Figure 4.0
Component Rotation
W1 Measured at Hub
Dim A Max
Dim A max
Dim N
See detail AA
7" Diameter Option
B Min Dim C See detail AA W3
Dim D min
13" Diameter Option
W2 max Measured at Hub DETAIL AA
Dimensions are in inches and millimeters
Tape Size
8mm
Reel Option
7" Dia
Dim A
7.00 177.8 13.00 330
Dim B
0.059 1.5 0.059 1.5
Dim C
512 +0.020/-0.008 13 +0.5/-0.2 512 +0.020/-0.008 13 +0.5/-0.2
Dim D
0.795 20.2 0.795 20.2
Dim N
2.165 55 4.00 100
Dim W1
0.331 +0.059/-0.000 8.4 +1.5/0 0.331 +0.059/-0.000 8.4 +1.5/0
Dim W2
0.567 14.4 0.567 14.4
Dim W3 (LSL-USL)
0.311 - 0.429 7.9 - 10.9 0.311 - 0.429 7.9 - 10.9
8mm
13" Dia
September 1999, Rev. C
SOT-23 Tape and Reel Data and Package Dimensions, continued
SOT-23 (FS PKG Code 49)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in: inches [millimeters]
Part Weight per unit (gram): 0.0082
September 1998, Rev. A1
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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DISCLAIMER
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LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
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Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. D

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